Transistor: N+P-MOSFET; unipolar; 40V/-40V; 6.7A/-7.2A; 0.032ohm/0.04ohm; 2.5W; -55+150 deg.C; SMD; SO8
Transistor: N+P-MOSFET; unipolar; 60V/-60V; 5.9A/-4.7A; 0.03ohm/0.048ohm; 2.01W; -55+150 deg.C; SMD; SO8
Transistor: N+P-MOSFET; unipolar; 60V/-60V; 6A/-4.5A; 0.029ohm/0.07ohm; 2W; -55+150 deg.C; SMD; SO8
Transistor: N+P-MOSFET; unipolar; 60V/-60V; 4.5A/-3.5A; 0.054ohm/0.105ohm; 3.57W; -55+150 deg.C; SMD; SO8
Transistor: N+P-MOSFET; unipolar; 40V/-40V; 11A/-10A; 0.014ohm/0.019ohm; 6.1W/5.2W; -55+-150 deg.C; SMD; SO8
Transistor: N-MOSFET; unipolar; 60V; 20A; 0.039ohm; 36W; -55+150 deg.C; SMD; TO252(DPAK)
Transistor: N-MOSFET; unipolar; 60V; 45A; 0.045ohm; 100W; -55+175 deg.C; SMD; TO252(DPAK)
Tranzystor N-mosfet STB35N60DM2, 600V, 28A, 110 mOhm, -55+150st.C
Tranzystor N-mosfet STB37N60DM2AG, 600V, 28A, 110 mOhm, 210W, -55+150st.C, AEC-Q101
Transistor: N-MOSFET; unipolar; 60V; 0.2A; -55+150 deg.C; THT; TO92
Transistor: N-MOSFET; unipolar; 60V; 0.115A; -55+150 deg.C; SMD; SOT23
Transistor: N-MOSFET; unipolar; 60V; 0.3A; 1.9ohm; 0.3W; -50+150 deg.C; SMD; SOT363
Poză orientativă – produsul conform cu descrierea poate fi diferit de cel prezentat pe imagine (formă, culoare, alte caracteristici)