Transistor; IGBT; 600V; 36A; 290W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
Transistor; IGBT; 600V; 36A; 290W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
Transistor; IGBT; 600V; 36A; 290W; POWER MOS 8, PT; -55+150 deg.C; SMD; D3PAK
Transistor; IGBT; 600V; 62A; 543W; POWER MOS 7, PT; -55+150 deg.C; THT; T-Max
Transistor; IGBT; 600V; 62A; 543W; POWER MOS 7; -55+150 deg.C; THT; TO247-3
Transistor; IGBT; 900V; 50A; 543W; POWER MOS 7, PT; -55+150 deg.C; THT; T-Max
Transistor; IGBT; 900V; 50A; 543W; POWER MOS 7, PT; -55+150 deg.C; THT; TO247-3
Transistor; IGBT; 1200V; 40A; 500W; NPT, POWER MOS 8; -55+150 deg.C; THT; TO247-3
Transistor; IGBT; 1200V; 40A; 500W; NPT, POWER MOS 8; -55+150 deg.C; THT; T-Max
Transistor; IGBT; 1200V; 40A; 500W; NPT Ultra Fast IGBT; -55+150 deg.C; SMD; D3PAK
Transistor; IGBT; 900V; 43A; 337W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
Transistor; IGBT; 900V; 43A; 337W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
Poză orientativă – produsul conform cu descrierea poate fi diferit de cel prezentat pe imagine (formă, culoare, alte caracteristici)