Transistor: N-MOSFET; unipolar; 700V; 10.1A; 0.65ohm; 86W; -40+150 deg.C; SMD; TO252(DPAK)
Transistor: N-MOSFET; unipolar; 700V; 7.5A; 0.36ohm; 59.4W; -40+150 deg.C; SMD; TO252(DPAK)
Transistor: N-MOSFET; unipolar; 40V; 20A; 0.007ohm; 65W; -55+175 deg.C; SMD; PG-TDSON8-10
Transistor: N-MOSFET; unipolar; 40V; 20A; 0.007ohm; 65W; -55+175 deg.C; SMD; PG-TDSON8-4; AEC-Q100
Transistor: N-MOSFET; unipolar; 100V; 9.2A; 0.2ohm; 45W; -55+175 deg.C; THT; TO220
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220
Transistor: N-MOSFET; unipolar; 100V; 28A; 0.077ohm; 150W; -55+175 deg.C; THT; TO220
Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220
Transistor: N-MOSFET; unipolar; 200V; 18A; 0.15ohm; 150W; -55+175 deg.C; THT; TO220
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
Transistor: N+P-MOSFET; unipolar; 30V/-30V; 6.8A/-6.6A; 0.020ohm/0.044ohm; 3.1W/3.2W; -55+-150 deg.C; SMD; SO8
Poză orientativă – produsul conform cu descrierea poate fi diferit de cel prezentat pe imagine (formă, culoare, alte caracteristici)