New Silicon Carbide diodes from WeEn Semiconductors

WeEn Semiconductors introduced diodes based on silicon carbide (SiC):

MPS 650 V, MPS 1200 V

and MPS 650 V SiC diode qualified for the AEC-Q101 standard for automotive grade discreete semiconductors.

WeEn 1200 V SiC MPS diodes are used in high frequency PFC power factor correction circuits in AC/DC power supplies.

Silicon carbide (SiC) is widely used as a semiconductor material for the production of medium / high voltage semiconductor devices. Its inherent material properties like a wide band gap and high thermal conductivity are great advantages compared to the properties of silicon. For example, SiC devices have a much higher switching frequency and virtually no Reverse Recovery Charge. In addition, this excellent and stable switching performance is independent of temperature. SiC diodes are qualified for a higher temperature of 175 degrees C and have lower thermal resistance. They enable physically smaller and more efficient circuit designs. The latest SiC technology is “Merged PN Schottky (MPS)” and has the great advantage of increasing the surge current handling capability. Thanks to the latest WeEn SiC diodes (MPS), the benefit for the customer is higher power conversion efficiency at a lower temperature in the application.

Below is a list of SiC diodes with their basic electrical parameters:

Maritex is an official partner of WeEn Semiconductors.

If you are interested in the above elements, please contact the Semiconductors Department by phone: +48 58 781 33 82, or by e-mail: a.szostek@maritex.com.pl.