Transistor: P+P-MOSFET; unipolar; -20V; -4.7A; 0.042ohm; 1.4W; -55+150 deg.C; SMD; TSSOP8
Transistor: P+P-MOSFET; unipolar; -20V; -4.5A; 0.042ohm; 1.5W; -55+150 deg.C; SMD; TSSOP8
Transistor: P+P-MOSFET; unipolar; -12V; -7A; 0.018ohm; 1.4W; -55+150 deg.C; SMD; TSSOP8
Transistor: P+P-MOSFET; unipolar; -12V; -6.5A; 0.02ohm; 1.4W; -55+150 deg.C; SMD; TSSOP8
Diode Module; 1600V; 100A; Vf:1.35V; double series; -40+125 deg.C; screw; A10; SEMIPACK1(93x20x30mm)
Diode Module; 800V; 14A; Vf:1.85V; double series; -40+125 deg.C; screw; A3; SEMIPACK0(94x34x30mm)
Diode Module; 1200V; 150A; Vf:2.2V; double series; -40+125 deg.C; screw; A53; SEMIPACK2(94x34x30mm)
Diode Module; 1600V; 160A; Vf:1.5V; double series; -40+135 deg.C; screw; A23; SEMIPACK2(94x34x30mm)
Diode Module; 2200V; 160A; Vf:1.5V; double series; -40+135 deg.C; screw; A23; SEMIPACK2(94x34x30mm)
Diode Module; 1600V; 26A; Vf: 1.35V; double series; -40+125 deg.C; screw; A10; SEMIPACK1( 93x20x30mm)
Diode Module; 1800A; 380A; Vf:1.25V; double series; -40+130 deg.C; screw; A78b; SEMIPACK3(115x50x52mm)
Diode Module; 800V; 45A; Vf:1.95V; double series; -40+125 deg.C; screw; A10; SEMIPACK1(93x20x30mm)
Poză orientativă – produsul conform cu descrierea poate fi diferit de cel prezentat pe imagine (formă, culoare, alte caracteristici)